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1 CMPA1D1E025F 25 w, 13.75 - 14.5 ghz, 40 v, ku-band gan mmic, power amplifer crees CMPA1D1E025F is a gallium nitride (gan) high electron mobility transistor (hemt) based monolithic microwave integrated circuit (mmic) on a silicon carbide (sic) substrate, using a 0.25 m gate length fabrication process. the ku band 25w mmic is targeted for commercial ku band satellite communications applications. it offers high gain and superior effciency while meets oqpsk linearity required for satcom applications at 3db backed off psat operations. this ku band mmic is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic fanged package. r e v 1 . 1 C f e b r u a r y 2 0 1 6 typical performance over 13.75-14.5 ghz (t c = 25?c) parameter 13.75 ghz 14.0 ghz 14.25 ghz 14.5 ghz units small signal gain 24 24.5 24.5 24 db linear output power 24 23 21 20 w power gain 21 21 20 20 db power added effciency 22 20 18 18 % note 1 : measured at -30 dbc, 1.6 mhz from carrier, in the CMPA1D1E025F-amp under oqpsk modulation, 1.6 msps, pn23, alpha filter = 0.2. features ? 24 db small signal gain ? 40 w typical pulsed p sat ? operation up to 40 v ? 20 w linear power under oqpsk ? class a/b high gain, high effciency 50 ohm mmic ku band high power amplifer applications ? satellite communications uplink pn: CMPA1D1E025F package type:440208 subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) parameter symbol rating units conditions drain-source voltage v dss 84 v dc 25?c gate-source voltage v gs -10, +2 v dc 25?c power dissipation p diss 94 w storage temperature t stg -55, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 10 ma 25?c soldering temperature 1 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case r jc 1.5 ?c/w p diss = 94 w, 85?c case operating temperature t c -40, +85 ?c cw, p diss = 94 w note: 1 refer to the application note on soldering at www.cree.com/products/wireless_appnotes.asp electrical characteristics (frequency = 13.75 ghz to 14.5 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold v gs(th) -3.8 -3.0 -2.3 v v ds = 10 v, i d = 18.2 ma gate quiscent voltage v q C -2.7 C v v ds = 40 v, i d = 240 ma saturated drain current 2 i ds 14.6 16.4 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v bd 84 100 C v v gs = -8 v, i d = 18.2 ma rf characteristics 3 small signal gain s21 C 24 C db v dd = 40 v, i dq = 240 ma, p in = -15 dbm input return loss s11 C -7 C db v dd = 40 v, i dq = 240 ma, p in = -15 dbm output return loss s22 C -7 C db v dd = 40 v, i dq = 240 ma, p in = -15 dbm output mismatch stress vswr C C 5:1 y no damage at all phase angles, v dd = 40 v, i dq = 240 ma, p out = 41 dbm oqpsk notes: 1 measured on-wafer prior to packaging. 2 scaled from pcm data. 3 measured in the CMPA1D1E025F-amp CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 electrical characteristics continued... (t c = 25?c) characteristics symbol min. typ. max. units conditions rf characteristics 1,2,3,4 power added effciency pae1 C 18.6 C % v dd = 40 v, i dq = 240 ma, frequency = 13.75 ghz power added effciency pae2 C 16.4 C % v dd = 40 v, i dq = 240 ma, frequency = 14.5 ghz power gain g p1 C 23.3 C db v dd = 40 v, i dq = 240 ma, frequency = 13.75 ghz power gain g p2 C 22.1 C db v dd = 40 v, i dq = 240 ma, frequency = 14.5 ghz oqpsk linearity aclr1 C -40 C dbc v dd = 40 v, i dq = 240 ma, frequency = 13.75 ghz oqpsk linearity aclr2 C -38 C dbc v dd = 40 v, i dq = 240 ma, frequency = 14.5 ghz notes: 1 measured in the CMPA1D1E025F-amp 2 under oqpsk modulated signal, 1.6 msps, pn23, alpha filter = 0.2. 3 measured at p ave = 41 dbm. 4 fixture loss de-embedded. electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 typical performance figure 1. - small signal s-parameters CMPA1D1E025F in test fixture v dd = 40v, i dq = 240 ma, tcase = 25c figure 2. - modulated @ spectral regrowth = -30dbc, 1.6 mhz from carrier 1.6 msps oqpsk modulation v dd = 40 v, i dq = 240 ma, tcase = 25c v dd = 40v, i dq = 240 ma, tcase = 25c -15 -10 -5 0 5 10 15 20 25 12 12.5 13 13.5 14 14.5 15 15.5 16 g a i n , r e t u r n l o s s (d b ) frequency (ghz) small signal s-parameters CMPA1D1E025F in test fixture vdd = 40 v, idq = 240 ma, tcase = 25c s21 s11 s22 20 22 24 26 28 30 39 40 41 42 43 44 g a in (d b ) , p a e (% ) o u t p u t p o w e r (d b m ) modulated @ spectral regrowth = -30dbc, 1.6 mhz from carrier 1.6 msps oqpsk modulation vdd = 40 v, idq = 240 ma, tcase = 25c pout gain pae 10 12 14 16 18 20 34 35 36 37 38 39 13.0 13.2 13.4 13.6 13.8 14.0 14.2 14.4 14.6 14.8 15.0 15.2 g a in (d b ) , p a e (% ) o u t p u t p o w e r (d b m ) frequency (ghz) gain pae output power CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 typical performance figure 3. - spectral mask @ average output power = 41dbm 1.6 msps oqpsk modulation v dd = 40 v, i dq = 240 ma, tcase = 25c figure 4. - CMPA1D1E025F modulated power sweep 1.6 msps oqpsk modulation v dd = 40 v, i dq = 240 ma, tcase = 25c - 25 -20 -15 -10 -5 0 15.0 17.5 20.0 22.5 25.0 27.5 s p e c t r a l r e g r o w t h @ 1 .6 m h z o f f s e t (d b c ) g a in (d b ) , p a e (% ) modulated power sweep 1.6 msps oqpsk modulation vdd = 40 v, idq = 240 ma, tcase = 25c gain 13.75 ghz gain 14 ghz gain 14.25 ghz gain 14.5 ghz pae 13.75 ghz pae 14 ghz pae 14.25 ghz pae 14.5 ghz sr 13.75 ghz sr 14 ghz sr 14.25 ghz sr 14.5 ghz -50 -45 -40 -35 -30 - 25 2.5 5.0 7.5 10.0 12.5 15.0 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 s p e c t r a l r e g r o w t h @ 1 .6 m h z o f f s e t (d b c ) g a in (d b ) , p a e (% ) average output power (dbm) sr 14.25 ghz sr 14.5 ghz - 35 -30 -25 -20 -15 -10 -5 0 s p e c t r a l r e g r o w t h (d b c ) spectral mask @ average output power = 41dbm 1.6 msps oqpsk modulation vdd = 40 v, idq = 240 ma, tcase = 25c 13.75 ghz 14 ghz 14.25 ghz 14.5 ghz -70 -65 -60 -55 -50 -45 -40 - 35 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 s p e c t r a l r e g r o w t h (d b c ) frequency offset (mhz) gain pae sr CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 typical performance figure 5. - modulated power sweep 1.6 msps oqpsk modulation v dd = 40 v, i dq = 240 ma, tcase = 25c 20 40 60 80 100 120 140 160 180 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 t r i s e (d e g c ) average output power (dbm) modulated power sweep 1.6 msps oqpsk modulation vdd = 40 v, idq = 240 ma, tcase = 25c trise 13.75 ghz trise 14 ghz trise 14.25 ghz trise 14.5 ghz figure 6. - CMPA1D1E025F modulated power sweep 1.6 msps oqpsk modulation v dd = 40 v, i dq = 240 ma, tcase = 25c 1.8 2 2.2 2.4 2.6 2.8 3 3.2 3.4 dr a in c u r r e n t (a ) modulated power sweep 1.6 msps oqpsk modulation vdd = 40 v, idq = 240 ma, tcase = 25c 13.75 ghz 14 ghz 14.25 ghz 14.5 ghz 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 dr a in c u r r e n t (a ) average output power (dbm) part would exceed recommended maximum 225 degc channel temperature at 85 degc case temp, if operated in this region CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 typical performance figure 7. - CMPA1D1E025F two tone power sweep imd3 @ 1 mhz carrier spacing v dd = 40 v, i dq = 240 ma, tcase = 25c - 35 -30 -25 -20 -15 t h ir d o r d e r i n t e r m o d u la t ion (d b c ) two tone power sweep imd3 @ 1 mhz carrier spacing vdd = 40 v, idq = 240 ma, tcase = 25c 13.75 ghz 14 ghz 14.25 ghz 14.5 ghz -55 -50 -45 -40 - 35 24 26 28 30 32 34 36 38 40 42 44 t h ir d o r d e r i n t e r m o d u la t ion (d b c ) pout (dbm) figure 8. -two tone power sweep imd @ 1 mhz carrier spacing, 14 ghz v dd = 40 v, i dq = 240 ma, tcase = 25c - 35 -30 -25 -20 -15 i m d (d b c ) two tone power sweep imd @ 1 mhz carrier spacing, 14 ghz vdd = 40 v, idq = 240 ma, tcase = 25c imd3 imd5 imd7 -55 -50 -45 -40 - 35 24 26 28 30 32 34 36 38 40 42 44 i m d (d b c ) pout (dbm) CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 typical performance figure 9. - two tone carrier spacing sweep @ 38 dbm average ouput power, 14 ghz v dd = 40 v, i dq = 1 a, tcase = 25c -30 -20 -10 0 i m d (d b c ) two tone carrier spacing sweep @ 38dbm average ouput power, 14 ghz vdd = 40 v, idq = 1 a, tcase = 25c -imd3 +imd3 - imd5 +imd5 -imd7 +imd7 -70 -60 -50 -40 0.10 1.00 10.00 100.00 i m d (d b c ) carrier spacing (mhz) figure 10. - cw vs. frequency @ p in = 23 dbm v dd = 40 v, i dq = 240 ma, tcase = 25c 20 22 24 26 28 30 40 41 42 43 44 45 g a in (d b ) , p a e (% ) o u t p u t p o w e r (d b m ) cw vs. frequency @ pin = 23 dbm vdd = 40 v, idq = 240 ma, tcase = 25c 10 12 14 16 18 20 35 36 37 38 39 40 13.0 13.2 13.4 13.6 13.8 14.0 14.2 14.4 14.6 14.8 15.0 15.2 15.4 g a in (d b ) , p a e (% ) o u t p u t p o w e r (d b m ) frequency (ghz) pout gain pae CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 typical performance figure 11. - cw power sweep CMPA1D1E025F in test fixture v dd = 40v, i dq = 240 ma, tcase = 25c 15 17.5 20 22.5 25 27.5 g a in (d b ) , p a e (% ) cw power sweep CMPA1D1E025F in test fixture vdd = 40v, idq = 240 ma, tcase = 25c gain 13.75 ghz gain 14 ghz gain 14.25 ghz gain 14.5 ghz pae 13.75 ghz pae 14 ghz 2.5 5 7.5 10 12.5 15 28 30 32 34 36 38 40 42 44 g a in (d b ) , p a e (% ) pout (dbm) pae 14 ghz pae 14.25 ghz pae 14.5 ghz figure 12. - pulsed vs. frequency @ pin = 23 dbm CMPA1D1E025F in test fixture v dd = 40 v, i dq = 240 ma, 100 us pulse width, 10% duty cycle, tcase = 25c 24 26 28 30 32 34 42 43 44 45 46 47 g a in (d b ) , p a e (% ) o u t p u t p o w e r (d b m ) pulsed vs. frequency @ pin = 23 dbm CMPA1D1E025F in test fixture 100 us pulse width, 10% duty cycle vdd = 40 v, idq = 240 ma, tcase = 25c 14 16 18 20 22 24 37 38 39 40 41 42 13.00 13.20 13.40 13.60 13.80 14.00 14.20 14.40 14.60 14.80 15.00 15.20 15.40 g a in (d b ) , p a e (% ) o u t p u t p o w e r (d b m ) frequency (ghz) pout gain pae CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
10 typical performance figure 13. - pulsed power sweep CMPA1D1E025F in test fixture 10% duty, 100 us pulse width v dd = 40v, i dq = 240 ma, tcase = 25c 17.5 20 22.5 25 27.5 30 g a in (d b ) , p a e (% ) pulsed power sweep CMPA1D1E025F in test fixture 10% duty, 100 us pulse width vdd = 40v, idq = 240 ma, tcase = 25c pae 13.75 ghz pae 14 ghz pae 14.25 ghz pae 14.5 ghz 2.5 5 7.5 10 12.5 15 30 32 34 36 38 40 42 44 46 g a in (d b ) , p a e (% ) pout (dbm) pae 14.5 ghz gain 13.75 ghz gain 14 ghz gain 14.25 ghz gain 14.5 ghz figure 14. - am-am v dd = 40 v, i dq = 240 ma, tcase = 25c 20 21 22 23 24 25 26 s 2 1 m a g n it u d e (d b ) am-am vdd = 40 v, idq = 240 ma, tcase = 25c 14 15 16 17 18 19 22 24 26 28 30 32 34 36 38 40 42 44 s 2 1 m a g n it u d e (d b ) output power (dbm) 13.75 ghz 14 ghz 14.25 ghz 14.5 ghz CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
11 typical performance figure 15. - am-pm v dd = 40 v, i dq = 240 ma, tcase = 25c 2 4 6 8 10 12 s 2 1 p h a s e (de g r e e s ) am-pm vdd = 40 v, idq = 240 ma, tcase = 25c -8 -6 -4 -2 0 22 24 26 28 30 32 34 36 38 40 42 44 s 2 1 p h a s e (de g r e e s ) output power (dbm) 13.75 ghz 14 ghz 14.25 ghz 14.5 ghz CMPA1D1E025F power dissipation de-rating curve note 1. area exceeds maximum case temperature (see page 2). 40 60 80 100 p o w e r d i s s i p a t i o n (w ) power dissipation de-rating curve 0 20 40 0 25 50 75 100 125 150 175 200 225 250 p o w e r d i s s i p a t i o n (w ) maximum case temperature (c) note 1 CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
12 CMPA1D1E025F-amp demonstration amplifer circuit bill of materials designator description qty c5 cap elect 100uf 80v afk smd 1 c1,c2 cap, 33000pf, 0805,100v, x7r 2 c3,c4 cap, 2.2uf, 100v, 10%, x7r, 1210 4 j1,j2 conn, sma, panel mount jack, flange, 4-hole, blunt post, 20mil 2 j4 conn, smb, straight jack receptacle, smt, 50 ohm, au plated 1 j3 header rt>plz .1cen lk 9pos 1 w1 wire, black, 22 awg ~ 1.50 1 w2 wire, black, 22 awg ~ 1.75 1 w3 wire, black, 22 awg ~ 2.0 1 pcb, test fixture, taconics rf35p, 20 mils, 440208 pkg 1 2-56 soc hd screw 1/4 ss 4 - #2 split lockwasher ss 4 q1 CMPA1D1E025F 1 CMPA1D1E025F-amp demonstration amplifer circuit CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
13 CMPA1D1E025F-amp demonstration amplifer circuit schematic CMPA1D1E025F-amp demonstration amplifer circuit outline CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
14 product dimensions CMPA1D1E025F (package type 440208) pin number qty 1 gate bias 2 nc 3 rf in 4 nc 5 gate bias 6 drain bias 7 drain bias 8 rf out 9 drain bias 10 drain bias 11 source CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
15 part number system parameter value units lower frequency 13.75 ghz upper frequency 1 14.5 ghz power output 25 w package flange - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package power output (w) upper frequency (ghz) lower frequency (ghz) cree mmic power amplifer product line CMPA1D1E025F CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
16 product ordering information order number description unit of measure image CMPA1D1E025F gan hemt each CMPA1D1E025F-tb test board without gan hemt each CMPA1D1E025F-amp test board with gan hemt installed each CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
17 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing & export cree, rf components 1.919.407.5302 ryan baker marketing cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CMPA1D1E025F rev 1.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2014-2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.

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